2SA2090
Transistors
Medium power transistor (−60V, −0.5A)
2SA2090
Dimensions (Unit : mm)
TSMT3
0.4
(1)
(3)
1.9
Applications
High speed switching, Low noise
0.3 ~ 0.6
0.85
1.0MAX
0 ~ 0.1
(1) Base
(2) Emitter
(3) Collector
0.7
0.16
(2)
0.95 0.95
2.8
1.6
2.9
Features
1) High speed switching. (Tf : Typ. : 35ns at IC = 500mA)
2) Low saturation voltage, typically.
(Typ. : −150mV at IC = −100mA, IB = −10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5868.
Each lead has same dimensioins
Abbreviated symbol : VM
Structure
NPN Silicon epitaxial planar
Packaging Specifications
Package
Type
Code
Basic ordering unit (pieces)
Taping
TL
3000
2SA2090
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−60
V
Emitter-base voltage
VEBO
−6
V
IC
−0.5
A
ICP
−1.0
A
Power dissipation
PC
500
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Collector current
∗1
∗2
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land.
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