DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3113B
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching
characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
• Low on-state resistance
RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A)
• Low gate charge
QG = 7.9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
• Gate voltage rating : ±30 V
• Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
2SK3113B-S15-AY
LEAD PLATING
Note
2SK3113B(1)-S27-AY
Note
Pure Sn (Tin)
TO-251 (MP-3-a) typ. 0.39 g
Tube 75 p/tube
TO-251 (MP-3-b) typ. 0.34 g
Tape 2500 p/reel
Note
2SK3113B-ZK-E2-AY
PACKAGE
Tube 70 p/tube
Note
2SK3113B-ZK-E1-AY
PACKING
TO-252 (MP-3ZK) typ. 0.27 g
Note Pb-free (This product does not contain Pb in external electrode.)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±2.0
A
ID(pulse)
±8.0
A
PT1
20
W
PT2
1.0
W
Tch
150
°C
Tstg
–55 to +150
°C
Drain Current (pulse)
Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Note2
Channel Temperature
Storage Temperature
Single Avalanche Current
Note3
IAS
2.0
A
Single Avalanche Energy
Note3
EAS
2.7
(TO-252)
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm
3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18061EJ3V0DS00 (3rd edition)
Date Published June 2007 NS
Printed in Japan
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
2006
