SSM3K01F
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01F
High Speed Switching Applications
Unit: mm
•
Small package
•
Low on resistance : Ron = 120 mΩ (max) (VGS = 4 V)
: Ron = 150 mΩ (max) (VGS = 2.5 V)
•
Low gate threshold voltage: Vth = 0.6 to 1.1 V (VDS = 3 V, ID = 0.1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
30
V
Gate-source voltage
VGSS
±10
V
DC
ID
1.3
Pulse
IDP
2.6
Drain power dissipation
PD
200
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
Note:
A
JEDEC
TO-236MOD
Using continuously under heavy loads (e.g. the application of
JEITA
SC-59
high temperature/current/voltage and the significant change in
TOSHIBA
2-3F1F
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.012 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Start of commercial production
1998-04
1
2014-03-01