SSM3K35MFV
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K35MFV
○ High-Speed Switching Applications
○ Analog Switch Applications
4 Ω (max) (@VGS = 2.5 V)
: Ron =
3 Ω (max) (@VGS = 4.0 V)
Characteristic
2
3
0.5±0.05
Absolute Maximum Ratings (Ta = 25˚C)
1
0.13±0.05
: Ron =
1.2±0.05
: Ron = 8 Ω (max) (@VGS = 1.5 V)
0.8±0.05
0.32±0.05
Low ON-resistance : Ron = 20 Ω (max) (@VGS = 1.2 V)
1.2±0.05
0.4
•
0.8±0.05
1.2 V drive
0.4
•
0.22±0.05
Unit: mm
Symbol
Rating
Unit
Drain–source voltage
VDSS
20
V
Gate–source voltage
VGSS
±10
V
DC
ID
180
Pulse
IDP
360
Drain current
Drain power dissipation
PD (Note 1)
1.Gate
2.Source
3.Drain
ＶＥＳＭ
mA
150
JEDEC
mW
-
Channel temperature
Tch
150
°C
JEITA
Storage temperature
Tstg
−55~150
°C
TOSHIBA
Note 1: Mounted on an FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.585 mm )
2-1L1B
Weight: 1.5 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
⎯
⎯
±10
μA
V (BR) DSS
ID = 0.1 mA, VGS = 0 V
20
⎯
⎯
V
VDS = 20 V, VGS = 0 V
⎯
⎯
1
μA
Vth
VDS = 3 V, ID = 1 mA
0.4
⎯
1.0
V
⏐Yfs⏐
VDS = 3 V, ID = 50 mA
(Note 2)
115
⎯
⎯
mS
(Note 2)
⎯
1.5
3
ID = 50 mA, VGS = 2.5 V
(Note 2)
⎯
2
4
ID = 5 mA, VGS = 1.5 V
(Note 2)
⎯
3
8
ID = 5 mA, VGS = 1.2 V
Drain cutoff current
VGS = ±10 V, VDS = 0 V
ID = 50 mA, VGS = 4 V
Drain–source breakdown voltage
IGSS
IDSS
Gate leakage current
(Note 2)
⎯
5
20
⎯
9.5
⎯
⎯
4.1
⎯
RDS (ON)
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Switching time
VDS = 3 V, VGS = 0 V, f = 1 MHz
Coss
⎯
9.5
ton
⎯
115
⎯
Turn-off time
toff
⎯
300
⎯
⎯
-0.9
-1.2
pF
⎯
Turn-on time
Ω
Drain–source forward voltage
VDSF
VDD = 3 V, ID = 50 mA,
VGS = 0 to 2.5 V
ID = - 180 mA, VGS = 0 V
(Note 2)
ns
V
Note 2: Pulse test
1
2008-05-27
