TLN227(F)
TOSHIBA Infrared LED
GaAℓAs Infrared Emitter
TLN227(F)
For Space−Optical−Transmission
•
Unit: mm
High radiant power: Po = 18mW (typ.) at IF = 50mA
•
Wide half−angle value: = θ1 / 2 ± 21° (typ.)
•
High−speed response: tr, tf = 30ns (typ.)
•
Light source for remote control
•
Designed for transmission of wireless AVsignals purpose.
•
Designed for high−speed data transmission
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
100
mA
Pulse forward current
IFP
1000
(Note 1)
mA
Power dissipation
PD
220
mW
Reverse voltage
VR
4
V
Operating temperature
Topr
−25~85
°C
Storage temperature
Tstg
−30~100
°C
Soldering temperature (5s)
Tsol
260
°C
TOSHIBA
4-6J1
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Pin Connection
temperature, etc.) may cause this product to decrease in the
1. Anode
reliability significantly even if the operating conditions (i.e.
1
2
2. Cathode
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Frequency = 100kHz, duty = 1%
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 100mA
―
1.8
2.2
V
Reverse current
IR
VR = 4V
―
―
60
μA
Radiant power
PO
IF = 50mA
14
18
―
mW
Radiant intensity
IE
IF = 50mA
―
100
―
mW / sr
IFP = 100mA, PW = 100ns
―
30
―
ns
fc
IF = 50mADC + 5mAp−p
10
15
―
MHz
Capacitance
CT
VR = 0, f = 1MHz
―
110
―
pF
Peak emission wavelength
λP
IF = 50mA
830
870
900
nm
Spectral line half width
Δλ
IF = 50mA
―
50
―
nm
1
θ
2
IF = 50mA
―
±5
―
°
Rise time, fall time
Cut−off frequency
Half value angle
tr, tf
(Note 2)
Note 2: Frequency when modulation light power decreases by 3dB from 1 MHz.
1
2007-10-01
