PD-96963
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF597130
100V, P-CHANNEL
5
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHF597130 100K Rads (Si)
IRHF593130 300K Rads (Si)
RDS(on)
ID
0.24Ω -6.7A
0.24Ω -6.7A
TO-39
International Rectifier’s R5 TM technology provides
high performance power MOSFETs for space applications. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC=25°C
ID @ VGS = -12V, TC=100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-6.7
-4.3
-26.8
25
0.2
±20
240
-6.7
2.5
-17
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in./1.6 mm from case for 10s)
0.98 (Typical )
g
For footnotes refer to the last page
www.irf.com
1
09/26/05
