KST05/06
KST05/06
Driver Transistor
• Collector-Emitter Voltage: VCEO = KST05: 60V
KST06: 80V
• Collector Power Dissipation: PC (max) = 350mW
• Complement to KST55/56
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Parameter
Value
Units
: KST05
: KST06
60
80
V
V
: KST05
: KST06
60
80
V
V
Collecto-Base Voltage
Collector-Emitter Voltage
VCEO
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current
500
mA
PC
Collector Power Dissipation
350
mW
TSTG
Storage Temperature
150
°C
RTH(j-a)
Thermal Resistance junction to Ambient
357
°C/W
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCEO
Parameter
* Collector-Emitter Breakdown Voltage
: KST05
: KST06
Test Condition
Min.
Max.
IC=1mA, IB=0
60
80
V
V
4
V
BVEBO
Emitter-Base Breakdown Voltage
IE=100µA, IC=0
ICBO
Collector Cut-off Current
VCB=60V, IE=0
VCB=80V, IE=0
: KST05
: KST06
Units
0.1
0.1
µA
µA
0.1
µA
ICEO
Collector Cut-off Current
VCE=60V, IB=0
hFE
DC Current Gain
VCE=1V, IC=10mA
VCE=1V, IC=100mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC=100mA, IB=10mA
0.25
V
VBE (on)
Base-Emitter On Voltage
VCE=1V, IC=100mA
1.2
V
fT
Current Gain Bandwidth Product
VCE=2V, IC=100mA, f=100MHz
50
50
100
MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Marking
Marking Code
Type
KST05
KST06
Mark
1H
1G
©2002 Fairchild Semiconductor Corporation
1H
Rev. A2, November 2002
