2SC5906
TOSHIBA Transistor
Silicon NPN Epitaxial Type
2SC5906
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
•
Unit: mm
High DC current gain: hFE = 200 to 500 (IC = 0.5 A)
•
Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max)
•
High-speed switching: tf = 25 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEX
50
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
7
V
DC
IC
4
Pulse
ICP
7
IB
0.4
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
DC
t = 10 s
PC (Note 1)
0.8
1.25
A
JEDEC
―
A
JEITA
―
TOSHIBA
W
Tj
150
−55 to 150
Weight: 0.01 g (typ.)
°C
Tstg
2-3S1C
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2002-11
1
2013-11-01
