PD-93791D
IRHF57034
JANSR2N7492T2
60V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
REF: MIL-PRF-19500/701
5
Product Summary
Part Number
IRHF57034
IRHF53034
TECHNOLOGY
Radiation Level RDS(on)
100K Rads (Si)
0.048Ω
300K Rads (Si)
0.048Ω
ID
QPL Part Number
12A* JANSR2N7492T2
12A* JANSF2N7492T2
500K Rads (Si)
0.048Ω
12A* JANSG2N7492T2
IRHF58034 1000K Rads (Si)
0.060Ω
12A* JANSH2N7492T2
IRHF54034
International Rectifier’s R5 TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
TO-39
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
12*
9.5
48
25
0.2
±20
270
12
2.5
9.6
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
10/19/11
