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部品型式

MT41J64M16LA-187E:B

製品説明
仕様・特性

1Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • Configuration – 256 Meg x 4 – 128 Meg x 8 – 64 Meg x 16 • FBGA package (Pb-free) – x4, x8 – 78-ball (8mm x 11.5mm) Rev. F, G – 78-ball (9mm x 11.5mm) Rev. D – 86-ball (9mm x 15.5mm) Rev. B • FBGA package (Pb-free) – x16 – 96-ball (9mm x 15.5mm) Rev. B – 96-ball (8mm x 14mm) Rev. G • Timing – cycle time – 1.25ns @ CL = 11 (DDR3-1600) – 1.25ns @ CL = 10 (DDR3-1600) – 1.5ns @ CL = 10 (DDR3-1333) – 1.5ns @ CL = 9 (DDR3-1333) – 1.87ns @ CL = 8 (DDR3-1066) – 1.87ns @ CL = 7 (DDR3-1066) • Operating temperature – Commercial (0°C ≤ TC ≤ +95°C) – Industrial (–40°C ≤ TC ≤ +95°C) – Automotive (–40°C ≤ TC ≤ +105°C) • Revision VDD = VDDQ = +1.5V ±0.075V 1.5V center-terminated push/pull I/O Differential bidirectional data strobe 8n-bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) POSTED CAS ADDITIVE latency (AL) Programmable CAS WRITE latency (CWL) based on tCK Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) Selectable BC4 or BL8 on-the-fly (OTF) Self refresh mode TC of 0°C to +95°C – 64ms, 8192 cycle refresh at 0°C to +85°C – 32ms, 8192 cycle refresh at +85°C to +95°C Self refresh temperature (SRT) Automatic self refresh (ASR) Write leveling Multipurpose register Output driver calibration Note: Marking 256M4 128M8 64M16 JP HX BY LA JT -125 -125E -15 -15E -187 -187E None IT AT :B/:D/:F/:G 1. Not all options listed can be combined to define an offered product. Use the part catalog search on http://www.micron.com for available offerings. Table 1: Key Timing Parameters Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL -1251, 2 1600 11-11-11 13.75 13.75 13.75 -125E1, 2 1600 10-10-10 12.5 12.5 12.5 -153 1333 10-10-10 15 15 15 -15E1 1333 9-9-9 13.5 13.5 13.5 -187 1066 8-8-8 15 15 15 -187E 1066 7-7-7 13.1 13.1 13.1 Notes: tRCD (ns) tRP (ns) CL (ns) 1. Backward compatible to 1066, CL = 7 (-187E). 2. Backward compatible to 1333, CL = 9 (-15E). PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2006 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

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