IXFN210N20P
PolarTM HiPerFETTM
Power MOSFET
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
=
=
≤
≤
200V
188A
10.5mΩ
Ω
200ns
miniBLOC
E153432
S
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
200
200
V
V
VGSS
VGSM
Continuous
Transient
±20
± 30
V
V
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
188
600
A
A
IA
EAS
TC = 25°C
TC = 25°C
105
4
A
J
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
20
V/ns
PD
TC = 25°C
1070
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
°C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
TJ
TJM
Tstg
TL
1.6mm (0.062 in.) from Case for 10s
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
Md
Mounting Torque
Terminal Connection Torque
t = 1min
t = 1s
Weight
G
S
D
G = Gate
S = Source
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Low Package Inductance
Avalanche Rated
Low RDS(ON) and QG
Fast Intrinsic Diode
Advantages
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
200
VGS(th)
VDS = VGS, ID = 8mA
2.5
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 105A, Note 1
Easy to Mount
Space Savings
High Power Density
V
© 2010 IXYS CORPORATION, All Rights Reserved
V
±200
TJ = 150°C
4.5
nA
25
2
μA
mA
10.5
mΩ
Applications
DC-DC Coverters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC and DC Motor Drives
Uninterrupted Power Supplies
High Speed Power Switching
Applications
DS100019A(05/10)
