2SC4738F
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC4738F
Audio Frequency General Purpose Amplifier Applications
Unit: mm
• High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
• Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
• High hFE: hFE = 120~400
• Complementary to 2SA1832F
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Storage temperature range
Tj
125
°C
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
TOSHIBA
2-2HA1A
temperature/current/voltage, etc.) are within the absolute maximum
Weight: 2.3 mg (typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
⎯
⎯
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
⎯
⎯
0.1
μA
120
⎯
400
IC = 100 mA, IB = 10 mA
⎯
0.1
0.25
V
VCE = 10 V, IC = 1 mA
80
⎯
⎯
MHz
VCB = 10 V, IE = 0, f = 1 MHz
⎯
2.0
3.5
pF
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
hFE
(Note)
VCE (sat)
fT
Cob
VCE = 6 V, IB = 2 mA
Note: hFE classification Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
Marking
1
2007-11-01
