This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SB0948 (2SB948), 2SB0948A (2SB948A)
Silicon PNP epitaxial planar type
For low-voltage switching
10.0±0.2
4.2±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
■ Features
7.5±0.2
2.7±0.2
16.7±0.3
ue
pl d in
an c
se
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
t n l
ht low disc dis ena ten low
tp in o co n an in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ty
ni bo yp p
c. u e e
uc
ne t l
d
tl
ife
t/s ate
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
• Low collector-emitter saturation voltage VCE(sat)
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
5.5±0.2
4.2±0.2
0.7±0.1
Unit: mm
φ 3.1±0.1
■ Absolute Maximum Ratings TC = 25°C
2SB0948
Collector-base voltage
(Emitter open)
Rating
Unit
VCBO
−40
V
−50
2SB0948A
−20
Collector-emitter voltage 2SB0948
(Base open)
2SB0948A
VCEO
Emitter-base voltage (Collector open)
VEBO
−5
−10
A
ICP
−20
40
0.8±0.1
A
PC
1.4±0.1
V
IC
14.0±0.5
Symbol
Solder Dip
(4.0)
Parameter
1.3±0.2
0.5+0.2
–0.1
W
Collector current
Peak collector current
Collector power dissipation
Ta = 25°C
V
−40
Tj
Storage temperature
1 2 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
2
150
°C
Tstg
Junction temperature
2.54±0.3
5.08±0.5
−55 to +150
°C
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
2SB0948
Collector-emitter voltage
(Base open)
Conditions
IC = −10 mA, IB = 0
VCEO
Min
Typ
Max
−20
Unit
V
−40
2SB0948A
ICBO
VCB = −40 V, IE = 0
−50
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −5 V, IC = 0
−50
µA
hFE1
VCE = −2 V, IC = − 0.1 A
45
hFE2 *
VCE = −2 V, IC = −3 A
60
co
nt
in
Collector-base cutoff current (Emitter open)
/D
is
Forward current transfer ratio
260
ce
M
ai
nt
en
an
Base-emitter saturation voltage
Transition frequency
VCE(sat)
IC = −10 A, IB = − 0.33 A
− 0.6
V
VBE(sat)
Collector-emitter saturation voltage
IC = −10 A, IB = − 0.33 A
−1.5
V
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
MHz
400
pF
0.1
µs
Pl
ea
Cob
100
VCB = −10 V, IE = 0, f = 1 MHz
fT
Collector output capacitance
(Common base, input open circuited)
ton
Storage time
Fall time
IC = −3 A, IB1 = − 0.1 A, IB2 = 0.1 A
tstg
Turn-on time
VCC = −20 V
0.5
µs
0.1
tf
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
60 to 120
90 to 180
130 to 260
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
SJD00027BED
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