February 1999
FDC658P
Single P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
Features
This P-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor's
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
SuperSOTTM-6
SOT-23
SuperSOTTM-8
-4 A, -30 V. RDS(ON) = 0.050 Ω @ VGS = -10 V
RDS(ON) = 0.075 Ω @ VGS = -4.5 V.
Low gate charge (8nC typical).
High performance trench technology for extremely low
RDS(ON).
SuperSOTTM-6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).
SOIC-16
SOT-223
SO-8
S
1
6
8
.65
2
5
3
4
D
D
G
D
SuperSOT
TM
-6
pin 1
Absolute Maximum Ratings
Symbol
TA = 25°C unless otherwise note
Parameter
VDSS
D
Ratings
Units
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage - Continuous
±20
V
ID
Drain Current - Continuous
-4
A
(Note 1a)
- Pulsed
PD
Maximum Power Dissipation
-20
(Note 1a)
(Note 1b)
TJ,TSTG
Operating and Storage Temperature Range
1.6
W
0.8
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
© 1999 Fairchild Semiconductor Corporation
FDC658P Rev.C
