PD - 9.1506
PRELIMINARY
IRFR/U9024N
HEXFET® Power MOSFET
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Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR9024N)
Straight Lead (IRFU9024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
D
VDSS = -55V
RDS(on) = 0.175Ω
G
ID = -11A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
D -P a k
T O -2 52 A A
I-P a k
TO -2 5 1 A A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-11
-8
-44
38
0.30
± 20
62
-6.6
3.8
-10
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
–––
3.3
50
110
°C/W
6/26/97
IRFR/U9024N
-I D , Drain-to-Source Current (A)
TOP
BOTTOM
100
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
TOP
-I D , Drain-to-Source Current (A)
100
10
-4.5V
1
BOTTOM
10
-4.5V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
100
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C
TJ = 150 ° C
1
V DS = -25V
20µs PULSE WIDTH
5
6
7
8
9
10
100
Fig 2. Typical Output Characteristics
100
0.1
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
-VDS , Drain-to-Source Voltage (V)
4
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
10
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
ID = -11A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
V GS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
