BC337/338
BC337/338
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC327/BC328
TO-92
1
1. Collector 2. Base 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCES
Parameter
Collector-Emitter Voltage
: BC337
: BC338
Value
Units
50
30
V
V
45
25
V
V
Collector-Emitter Voltage
: BC337
: BC338
VCEO
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
800
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector-Emitter Breakdown Voltage
: BC337
: BC338
Test Condition
IC=10mA, IB=0
Collector-Emitter Breakdown Voltage
: BC337
: BC338
IC=0.1mA, VBE=0
BVEBO
Emitter-Base Breakdown Voltage
IE=0.1mA, IC=0
ICES
Collector Cut-off Current
: BC337
: BC338
VCE=45V, IB=0
VCE=25V, IB=0
BVCES
Min.
Typ.
Max.
Units
45
25
V
V
50
30
V
V
5
V
2
2
100
60
100
100
nA
nA
630
hFE1
hFE2
DC Current Gain
VCE=1V, IC=100mA
VCE=1V, IC=300mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC=500mA, IB=50mA
0.7
VBE (on)
Base Emitter On Voltage
VCE=1V, IC=300mA
1.2
fT
Current Gain Bandwidth Product
VCE=5V, IC=10mA, f=50MHz
100
MHz
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
12
pF
V
V
hFE Classification
Classification
16
25
40
hFE1
100 ~ 250
160 ~ 400
250 ~ 630
hFE2
60-
100-
170-
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
