S5566B,S5566G,S5566J,S5566N
TOSHIBA RECTIFIER SILICON DIFFUSED TYPE
S5566B,S5566G,S5566J,S5566N
GENERAL PURPOSE RECTIFIER APPLICATIONS
Unit: mm
Average Forward Current
: IF (AV) = 1A
Repetitive Peak Reverse Voltage : VRRM = 100, 400, 600, 1000V
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
S5566B
S5566G
Repetitive Peak
Reverse Voltage
S5566J
100
400
VRRM
1000
IF (AV)
1.0
A
45 (50Hz)
S5566B
S5566G
Peak One Cycle
Surge Forward
Current
(Non Repetitive)
V
600
S5566N
Average Forward Current
UNIT
IFSM
S5566J
S5566N
49 (60Hz)
A
30 (50Hz)
JEDEC
33 (60Hz)
⎯
⎯
Tj
Storage Temperature Range
−40~150
°C
JEITA
Tstg
Junction Temperature
−40~150
°C
TOSHIBA
3-3E1A
Weight: 0.225 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Peak Forward Voltage
VFM
IFM = 1.0A
―
―
1.2
V
Repetitive Peak Reverse Current
IRRM
VRRM = Rated
―
―
10
μA
MARKING
Abbreviation Code
G
S5566J
N
1
S5566G
J
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
S5566B
G
Lot No.
Part No.
B
Part No. (or abbreviation code)
S5566N
2006-11-06
