April 2007
tm
FDC6331L
Integrated Load Switch
Features
General Description
–2.8 A, –8 V. RDS(ON) = 55 m @ V GS = –4.5 V
RDS(ON) = 70 m @ V GS = –2.5 V
RDS(ON) = 100 m @ V GS = –1.8 V
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 2.8A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) that drives a large P
-Channel
power MOSFET (Q2) in one tiny SuperSOTT M-6
package.
Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)
High performance trench technology for extremely
low RDS(ON)
Applications
Load switch
Power management
D2
Equivalent Circuit
Q2
S1
Vin,R1
4
3
Vout,C1
ON/OFF
5
2
Vout,C1
R1,C1
6
1
R2
D1
IN
SuperSOT
Pin 1
-6
OUT
Q1
G2
TM
+ V
–
DROP
S2
G1
ON/OFF
See Application Circuit
SuperSOT™-6
Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol
V IN
Parameter
Maximum Input Voltage
Ratings
8
Units
V
V ON/OFF
High level ON/OFF voltage range
–0.5 to 8
V
ILoad
Load Current
2.8
A
– Continuous
(Note 1)
– Pulsed
9
PD
Maximum Power Dissipation
TJ , TSTG
Operating and Storage Junction Temperature Range
(Note 1)
0.7
W
–55 to +150
C
Thermal Characteristics
R JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
180
C/W
R JC
Thermal Resistance, Junction-to-Case
(Note 1)
60
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.331
FDC6331L
7’’
8mm
3000 units
2007 Fairchild Semiconductor Corporation
FDC6331L Rev D
FDC6331L
August 2001
