NTMS5P02, NVMS5P02
Power MOSFET
-5.4 Amps, -20 Volts
P−Channel Enhancement−Mode
Single SOIC−8 Package
http://onsemi.com
Features
• High Density Power MOSFET with Ultra Low RDS(on)
•
•
•
•
•
•
•
VDSS
Providing Higher Efficiency
Miniature SOIC−8 Surface Mount Package − Saves Board Space
Diode Exhibits High Speed with Soft Recovery
IDSS Specified at Elevated Temperature
Drain−to−Source Avalanche Energy Specified
Mounting Information for the SOIC−8 Package is Provided
These Devices are Pb−Free and are RoHS Compliant
NVMS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
RDS(ON) TYP
26 mW @ −4.5 V
−20 V
−5.4 A
Single P−Channel
D
G
S
Applications
MARKING DIAGRAM &
PIN ASSIGNMENT
• Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
ID MAX
8
1
8
D
D
E5P02x
AYWW G
G
SOIC−8
CASE 751
STYLE 13
1
NC S
E5P02
x
A
Y
WW
G
D D
S G
= Specific Device Code
= Blank or S
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMS5P02R2G
SOIC−8 2500 / Tape & Reel
(Pb−Free)
NVMS5P02R2G
SOIC−8 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 3
1
Publication Order Number:
NTMS5P02R2/D
