R1RP0408D Series
4M High Speed SRAM (512-kword × 8-bit)
REJ03C0112-0200
Rev. 2.00
Dec.1.2008
Description
The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in
400-mil 36-pin plastic SOJ.
Features
• Single 5.0 V supply: 5.0 V ± 10%
• Access time: 10 ns / 12 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 140mA /130mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current : 5 mA (max)
: 1.0 mA (max) (L-version)
• Data retention current: 0.5 mA (max) (L-version)
• Data retention voltage: 2 V (min) (L-version)
• Center VCC and VSS type pin out
RJE03C0112-0200
Rev.2.00,
Dec.1.2008, page 1 of 12
