TC74HC245AP/AF,640AP/AF
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74HC245AP, TC74HC245AF
TC74HC640AP, TC74HC640AF
Octal Bus Transceiver
TC74HC245AP/AF
TC74HC640AP/AF
3-State,
Non-Inverting
3-State, Inverting
The TC74HC245A, 640A are high speed CMOS OCTAL BUS
TRANSCEIVERs fabricated with silicon gate C2MOS technology.
They achieve the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
They are intended for two-way asynchronous communication
between data busses. The direction of data transmission is
determined by the level of the DIR input.
The enable input ( G ) can be used to disable the device so that
the busses are effectively isolated.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
TC74HC245AP, TC74HC640AP
TC74HC245AF, TC74HC640AF
Features (Note 1)(Note 2)
•
High speed: tpd = 10 ns (typ.) at VCC = 5 V
•
Low power dissipation: ICC = 4 μA (max) at Ta = 25°C
•
High noise immunity: VNIH = VNIL = 28% VCC (min)
•
Output drive capability: 15 LSTTL loads
•
Symmetrical output impedance: |IOH| = IOL = 6 mA (min)
∼
Balanced propagation delays: tpLH − tpHL
•
•
: 1.30 g (typ.)
: 0.22 g (typ.)
Wide operating voltage range: VCC (opr) = 2 to 6 V
•
Weight
DIP20-P-300-2.54A
SOP20-P-300-1.27A
Pin and function compatible with 74LS245/640
Note 1: Do not apply a signal to any bus terminal when it is in the output mode. Damage may result.
Note 2: All floating (high impedance) bus terminals must have their input levels fixed by means of pull up or pull
down resistors.
Start of commercial production
1986-05
1
2014-03-01
TC74HC245AP/AF,640AP/AF
Absolute Maximum Ratings (Note 1)
Characteristics
Symbol
Rating
Unit
Supply voltage range
VCC
−0.5 to 7
V
DC input voltage
VIN
−0.5 to VCC + 0.5
V
VOUT
−0.5 to VCC + 0.5
V
Input diode current
IIK
±20
mA
Output diode current
IOK
±20
mA
DC output current
IOUT
±35
mA
DC VCC/ground current
ICC
±75
mA
Power dissipation
PD
500 (DIP) (Note 2)/180 (SOP)
mW
Storage temperature
Tstg
−65 to 150
°C
DC output voltage
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be
applied until 300 mW.
Operating Ranges (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
2 to 6
V
Input voltage
VIN
0 to VCC
V
VOUT
0 to VCC
V
Operating temperature
Topr
−40 to 85
°C
Input rise and fall time
tr, tf
Output voltage
0 to 1000 (VCC = 2.0 V)
0 to 500 (VCC = 4.5 V)
ns
0 to 400 (VCC = 6.0 V)
Note:
The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs and
bus inputs must be tied to either VCC or GND. Please connect both bus inputs and the bus outputs with VCC
or GND when the I/O of the bus terminal changes by the function. In this case, please note that the output is
not short-circuited.
3
2014-03-01
