SEMICONDUCTOR
KTD1003
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURES
A
High DC Current Gain
C
H
: hFE=800 3200. (VCE=5.0V, IC=300mA).
G
J
B
E
Wide Area of Safe Operation.
Low Collector Saturation Voltage
DIM
A
B
C
D
E
F
G
H
J
K
: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
D
D
K
F
MAXIMUM RATING (Ta=25
)
CHARACTERISTIC
1
SYMBOL
RATING
VCBO
60
VCEO
50
V
Emitter-Base Voltage
VEBO
8
V
IC
1.0
A
PC
500
mW
PC *
1
W
Tj
3
V
Collector-Emitter Voltage
2
UNIT
Collector-Base Voltage
F
MILLIMETERS
4.70 MAX
_
2.50 + 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
_
1.50 + 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
150
Collector Current
Collector Power Dissipation
Junction Temperature
Tstg
Storage Temperature Range
-55
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
150
PC* : KTD1003 Mounted on Ceramic Substrate (250mm x0.8t)
2
Marking
h FE Rank
Lot No.
L
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=60V, IE=0
-
-
100
nA
Emitter Cut-off Current
IEBO
VEB=8V, IC=0
-
-
100
nA
VCE=5.0V, IC=300mA
800
1500
3200
hFE(2)
VCE=5.0V, IC=1.0A
400
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=500mA, IB=5.0mA
-
0.17
0.30
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=500mA, IB=5.0mA
-
0.80
1.2
V
VCB=10V, IE=0, f=1.0MHz
-
18
30
pF
150
250
-
MHz
-
630
700
mV
hFE(1) Note
DC Current Gain
Cob
Collector Output Capacitance
Transition Frequency
fT
Base-Emitter Voltage
VBE
Note : hFE Classification
2001. 3. 22
A:800 1600,
B:1200
Revision No : 4
VCE=10V, IC=500mA, f=100MHz
VCE=5V, IC=100mA
2400, C:2000 3200
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