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部品型式

KTD1003-A-RTFP

製品説明
仕様・特性

SEMICONDUCTOR KTD1003 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A High DC Current Gain C H : hFE=800 3200. (VCE=5.0V, IC=300mA). G J B E Wide Area of Safe Operation. Low Collector Saturation Voltage DIM A B C D E F G H J K : VCE(sat)=0.17V (IC=500mA, IB=5.0mA). D D K F MAXIMUM RATING (Ta=25 ) CHARACTERISTIC 1 SYMBOL RATING VCBO 60 VCEO 50 V Emitter-Base Voltage VEBO 8 V IC 1.0 A PC 500 mW PC * 1 W Tj 3 V Collector-Emitter Voltage 2 UNIT Collector-Base Voltage F MILLIMETERS 4.70 MAX _ 2.50 + 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 1.50 + 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 150 Collector Current Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range -55 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 150 PC* : KTD1003 Mounted on Ceramic Substrate (250mm x0.8t) 2 Marking h FE Rank Lot No. L Type Name ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=60V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=8V, IC=0 - - 100 nA VCE=5.0V, IC=300mA 800 1500 3200 hFE(2) VCE=5.0V, IC=1.0A 400 - - Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=5.0mA - 0.17 0.30 V Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=5.0mA - 0.80 1.2 V VCB=10V, IE=0, f=1.0MHz - 18 30 pF 150 250 - MHz - 630 700 mV hFE(1) Note DC Current Gain Cob Collector Output Capacitance Transition Frequency fT Base-Emitter Voltage VBE Note : hFE Classification 2001. 3. 22 A:800 1600, B:1200 Revision No : 4 VCE=10V, IC=500mA, f=100MHz VCE=5V, IC=100mA 2400, C:2000 3200 1/2

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