DATA SHEET
SILICON POWER TRANSISTOR
2SC4815
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4815 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor is available for the auto mount in the radial taping specifications and for mounting cost
reduction.
FEATURES
• High hFE and low VCE(sat):
VCE(sat) ≤ 0.3 V @IC = 3.0 A, IB = 0.15 A
hFE ≥ 100
@VCE = 2.0 V, IC = 1.0 A
• Available for auto mount in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
5.0
A
IC(pulse)*
10
A
IB(DC)
2.5
A
Total power dissipation
PT
1.8
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Collector current (pulse)
Base current (DC)
* PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15605EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
