POWEREX
MITSUBISHI SEMICONDUCTOR
M54566P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are
made of PNP and NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with extremely low input-current supply.
PIN CONFIGURATION
INPUT
FEATURES
High breakdown voltage (BV CEO ≥ 50V)
High-current driving (Ic(max) = 400mA)
Active L-level input
Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and printers, and
MOS-bipolar logic IC interfaces
IN1→ 1
16 →O1
IN2→ 2
15 →O2
IN3→ 3
14 →O3
IN4→ 4
13 →O4 OUTPUT
IN5→ 5
12 →O5
IN6→ 6
11 →O6
IN7→ 7
10 →O7
GND
8
9
VCC
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
VCC
20K
OUTPUT
2.7K
INPUT
8K
7.2K
FUNCTION
The M54566 is produced by adding PNP transistors to
M54222 inputs. Seven circuits having active L-level inputs
are provided.
Resistance of 8kΩ is provided between each input and PNP
transistor base. The input emitters are connected to VCC pin
(pin 9). Output transistor emitters are all connected to the
GND pin (pin 8).
Collector current is 400mA maximum. Collector-emitter supply voltage is 50V maximum.
These ICs are optimal for drivers that are driven with N-MOS
IC output and absorb collector current.
The M54566FP is enclosed in a molded small flat package,
enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS
GND
The seven circuits share the VCC and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Symbol
VCC
Supply voltage
VCEO
IC
Collector-emitter voltage
Collector current
Output, H
Current per circuit output, L
VI
Pd
Input voltage
Power dissipation
Ta = 25°C, when mounted on board
Topr
Operating temperature
Storage temperature
Tstg
Parameter
3K
Conditions
Ratings
10
Unit
V
–0.5 ~ +50
V
mA
400
–0.5 ~ VCC
V
W
1.47(P)/1.00(FP)
–20 ~ +75
°C
–55 ~ +125
°C
Aug. 1999