1SS250
TOSHIBA Diode
Silicon Epitaxial Planar Type
1SS250
Unit: mm
Ultra High Speed Switching Application
Low forward voltage
: VF (2) = 0.90V (typ.)
Fast reverse recovery time : trr = 60ns (max)
Small total capacitance
: CT = 1.5pF (typ.)
Small package
: SC−59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Peak reverse voltage
Symbol
Rating
Unit
VRM
250
V
Reverse voltage
VR
200
V
Peak forward current
IFM
300
mA
Average forward current
IO
100
mA
Surge current (10 ms)
Power dissipation
Junction temperature
Storage temperature range
IFSM
2
A
P
150
mW
Tj
125
°C
Tstg
−55 to 125
°C
JEDEC
−
JEITA
SC−59
TOSHIBA
1−3G1B
Weight: 0.012g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
VF (1)
―
VF (2)
Min
Typ.
Max
IF = 10mA
―
0.72
1.00
―
IF = 100mA
―
0.90
1.20
IR (1)
―
VR = 50V
―
―
0.1
IR (2)
―
VR = 200V
―
―
1.0
Total capacitance
CT
―
VR = 0, f = 1MHz
―
1.5
3.0
pF
Reverse recovery time
trr
―
IF = 10mA (Fig.1)
―
10
60
ns
Characteristic
Forward voltage
Reverse current
Test Condition
Fig.1 Reverse recovery time (trr) test circuit
Unit
V
μA
Marking
Start of commercial production
1984-05
1
2014-03-01