DATA SHEET
COMPOUND FIELD EFFECT POWER TRANSISTOR
µPA1552B
N-CHANNEL POWER MOS FET ARRAY
SWITCHING USE
DESCRIPTION
PACKAGE DIMENSIONS
The µPA1552B is N-channel Power MOS FET Array
in millimeters
that built in 4 circuits designed, for solenoid, motor and
4.0
26.8 MAX.
10
lamp driver.
2.5
• 4 V driving is possible
10 MIN.
FEATURES
• Large Current and Low On-state Resistance
ID(DC) = ±5.0 A
1.4
0.5±0.1
2.54
RDS(on)1 ≤ 0.18 Ω MAX. (VGS = 10 V, ID = 3 A)
1.4 0.6±0.1
RDS(on)2 ≤ 0.24 Ω MAX. (VGS = 4 V, ID = 3 A)
• Low Input Capacitance Ciss = 200 pF TYP.
1 2 3 4 5 6 7 8 9 10
ORDERING INFORMATION
Type Number
µPA1552BH
CONNECTION DIAGRAM
3
Package
5
7
9
10 Pin SIP
2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS Note 1
60
V
Gate to Source Voltage
VGSS Note 2
±20
V
Drain Current (DC)
ID(DC)
±5.0
A/unit
Drain Current (pulse)
ID(pulse) Note 3
±20
A/unit
Total Power Dissipation
PT1 Note 4
28
W
Total Power Dissipation
PT2 Note 5
3.5
TCH
150
Tstg
–55 to +150
Single Avalanche Current
5.0
EAS Note 6
2.5
10
A
Single Avalanche Energy
1
˚
C
IAS Note 6
8
˚
C
Storage Temperature
6
W
Channel Temperature
4
mJ
Notes 1. VGS = 0
3. PW ≤ 10 µs, Duty Cycle ≤ 1 %
5. 4 Circuits, TA = 25 ˚C
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
1, 10
: Source
2. VDS = 0
4. 4 Circuits, TC = 25 ˚C
6. Starting TCH = 25 ˚C, V DD = 30 V, VGS = 20 V → 0,
RG = 25 Ω, L = 100 µH
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Document No. G10599EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
©
1995
