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2SJ200-YF
2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 4.0 S (typ.) Complementary to 2SK1529 Absolute Maximum Ratings (Ta = 25°C) Characteristics 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Symbol Rating Unit Drain−source voltage VDSS −180 V Gate−source voltage VGSS ±20 V JEDEC ― ID −10 A JEITA ― Drain power dissipation (Tc = 25°C) PD 120 W Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current (Note 1) TOSHIBA 2-16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-16
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
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