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GT25Q102Q
GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Motor Control Applications • Third-generation IGBT • Unit: mm Enhancement mode type • High speed: tf = 0.32 μs (max) • Low saturation voltage: VCE (sat) = 2.7 V (max) • FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V DC IC 25 1 ms ICP 50 DC IF 25 1 ms IFP 50 Collector power dissipation (Tc = 25°C) PC 200 W TOSHIBA Junction temperature Tj 150 °C Weight: 9.75 g (typ.) Tstg −55 to 150 °C Collector current Diode forward current Storage temperature range A JEDEC ― JEITA A ― 2-21F2C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Marking Collector Part No. (or abbreviation code) TOSHIBA GT25Q301 Gate Lot No. JAPAN Emitter A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
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