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GT15Q301
GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 High-Power Switching Applications Motor Control Applications Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.32 μs (max) Low saturation voltage : VCE (sat) = 2.7 V (max) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Gate−Emitter Voltage Unit VCES Collector−Emitter Voltage Rating 1200 V VGES ±20 V DC IC 15 A 1ms ICP 30 A DC IF 15 A JEDEC ⎯ 1ms IFM 30 A JEITA ⎯ Collector Power Dissipation (Tc = 25°C) PC 170 W TOSHIBA Junction Temperature Tj 150 °C Tstg −55 to 150 °C Collector Current Emitter−Collector Forward Current Storage Temperature Range 2-16C1C Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Marking TOSHIBA GT15Q301 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2010-01-07
TOSHIBA
株式会社 東芝セミコンダクター&ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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