This product complies with the RoHS Directive (EU 2002/95/EC).
DRA4114T (Tentative)
Silicon PNP epitaxial planar type
For digital circuits
Packaging
Package
Radial type: 5000 pcs / carton
Code
NS-B1-B
Name
Pin
1: Emitter
2: Collector
3: Base
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–50
V
Collector-emitter voltage (Base open)
VCEO
–50
V
Collector current
IC
–100
mA
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Marking Symbol: LD
Internal Connection
B
C
R1
E
Resistance value
R1
10
kΩ
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 µA, IE = 0
–50
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –50 V, IE = 0
– 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = –50 V, IB = 0
– 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = –6 V, IC = 0
– 0.01
mA
Forward current transfer ratio
hFE
VCE = –10 V, IC = –5 mA
460
– 0.25
V
Collector-emitter saturation voltage
VCE(sat)
IC = –10 mA, IB = – 0.5 mA
Input voltage (ON)
VI(on)
VCE = – 0.2 V, IC = –5 mA
Input voltage (OFF)
VI(off)
160
VCE = –5 V, IC = –100 µA
Input resistance
R1
–1.2
V
– 0.4
–30%
10
V
+30%
kΩ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2009
ZJH00451AED
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