JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323
2SC4215
Plastic-Encapsulate Transistors
SOT-323
TRANSISTOR (NPN)
FEATURES
Small reverse transfer capacitance: Cre= 0.55pF(typ.)
Low noise figure: NF=2dB (typ.) (f=100 MHz)
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current -Continuous
20
mA
PC
Collector Power Dissipation
100
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
4
V
Collector cut-off current
ICBO
VCB=40V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.5
μA
DC current gain
hFE
VCE=6V,IC=1mA
Cc.rbb′
Collector-base time constant
40
VCE=6V,IC=1mA, f=30MHZ
fT
VCE=6V,IC=1mA,
Reverse transfer capacitance
Cre
Noise figure
25
VCB=10V,f=1MHz
NF
Transition frequency
Gpe
Power gain
200
260
550
MHz
0.55
pF
2
VCC=6V,Ic=1mA,f=100MHZ
ps
17
5
23
dB
dB
CLASSIFICATION OF hFE
R
O
Y
Range
40-80
70-140
100-200
Marking
QR
QO
QY
Rank
A,May,2011
