FQA36P15
P-Channel QFET® MOSFET
−150 V, -36 A, 90 mΩ
Features
Description
• -36 A, -150 V, RDS(on) = 90 mΩ (Max) @VGS = -10 V, ID = -18 A This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
• Low Gate Charge (Typ. 81 nC)
stripe and DMOS technology. This advanced MOSFET
• Low Crss (Typ. 110 pF)
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
• 100% Avalanche Tested
high avalanche energy strength. These devices are suitable for
• 175°C Maximum Junction Temperature Rating
switched mode power supplies, audio amplifier, DC motor
control, and variable switching power applications.
S
G
G
D
TO-3PN
S
D
Absolute Maximum Ratings
Symbol
TC = 25°C unless otherwise noted.
Parameter
FQA36P15
Unit
VDSS
Drain-Source Voltage
-150
V
ID
Drain Current
- Continuous (TC = 25°C)
-36
A
IDM
Drain Current
- Pulsed
VGSS
Gate-Source Voltage
EAS
- Continuous (TC = 100°C)
-25.5
A
(Note 1)
-144
A
± 30
V
Single Pulsed Avalanche Energy
(Note 2)
1400
mJ
IAR
Avalanche Current
(Note 1)
-36
A
EAR
Repetitive Avalanche Energy
(Note 1)
29.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
-5.0
V/ns
PD
Power Dissipation (TC = 25°C)
294
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
- Derate above 25°C
1.96
W/°C
-55 to +175
°C
300
°C
Thermal Characteristics
Symbol
Parameter
FQA36P15
Unit
RθJC
Thermal Resistance, Junction-to-Case, Max.
0.51
°C/W
RθCS
Thermal Resistance, Case-to-Sink, Typ.
0.24
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
40
°C/W
©2000 Fairchild Semiconductor Corporation
FQA36P15 Rev C1
1
www.fairchildsemi.com
FQA36P15 — P-Channel QFET® MOSFET
December 2013