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部品型式

MT29F8G08AAAWP:ATR

製品説明
仕様・特性

2Gb, 4Gb, 8Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F2G08AACWP, MT29F4G08BACWP, MT29F8G08FACWP For the latest data sheet, refer to the Micron Web site: www.micron.com/products/nand/ Features Figure 1: • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Page size x16: 1,056 words (1,024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks • READ performance – Random READ: 25µs – Sequential READ: 30ns (3V x8 only) • WRITE performance – PROGRAM PAGE: 300µs (TYP) – BLOCK ERASE: 2ms (TYP) • Endurance: 100,000 PROGRAM/ERASE cycles • First block (block address 00h) guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles) • VCC: 1.70V–1.95V1 or 2.7V–3.6V • Automated PROGRAM and ERASE • Basic NAND Flash command set: – PAGE READ, READ for INTERNAL DATA MOVE, RANDOM DATA READ, READ ID, READ STATUS, PROGRAM PAGE, RANDOM DATA INPUT, PROGRAM PAGE CACHE MODE, PROGRAM for INTERNAL DATA MOVE, BLOCK ERASE, RESET • New commands: – PAGE READ CACHE MODE – One-time programmable (OTP), including: OTP DATA PROGRAM, OTP DATA PROTECT, OTP DATA READ – READ UNIQUE ID (contact factory) – READ ID2 (contact factory) • Operation status byte provides a software method of detecting: – PROGRAM/ERASE operation completion – PROGRAM/ERASE pass/fail condition – Write-protect status • READY/BUSY (R/B#) pin provides a hardware method of detecting PROGRAM or ERASE cycle completion • WP# pin: hardware write protect PDF: 09005aef814b01a2 / Source: 09005aef814b01c7 2_4_8gb_nand_m49a__1.fm - Rev. C 10/06 EN Options 48-Pin TSOP Type 1 Marking • Density: – 2Gb (single die) MT29F2G – 4Gb (dual-die stack) MT29F4G – 8Gb (quad-die stack) MT29F8G • Device width: – x8 MT29Fxx08x – x161 MT29Fxx16x • Configuration: # of die # of CE# # of R/B# 1 1 1 A 2 1 1 B 4 2 2 F • VCC: – 2.7V–3.6V A – 1.70V–1.95V1 B • Third-generation die C • Package: – 48-Pin TSOP type I (lead-free) WP • Operating temperature: – Commercial (0°C to 70°C) None – Extended (–40°C to +85°C)2 ET Notes: 1. Packaged parts are only available for 3V x8 devices. For 1.8V or x16 devices, contact factory. 2. For ET devices, contact factory. 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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