ADVANCED INFORMATION
MX29F400CT/CB
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE
5V ONLY BOOT SECTOR FLASH MEMORY
FEATURES
• 524,288 x 8/262,144 x 16 switchable
• Single power supply operation
- 5.0V only operation for read, erase and program
operation
• Fast access time: 70/90/120ns
• Compatible with MX29F400T/B device
• Low power consumption
- 40mA maximum active current(5MHz)
- 1uA typical standby current
• Command register architecture
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1, 8KBytex2, 32K-Bytex1, and 64K-Byte x7)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends an erase operation to read data from, or
program data to, another sector that is not being
erased, then resumes the erase.
• Status Reply
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- Data# Polling & Toggle bit for detection of program
and erase cycle completion.
Ready/Busy pin (RY/BY#)
- Provides a hardware method of detecting program or
erase cycle completion.
- Sector protect/unprotect for 5V only system or 5V/
12V system.
Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
100,000 minimum erase/program cycles
Latch-up protected to 100mA from -1V to VCC+1V
Boot Code Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
Low VCC write inhibit is equal to or less than 3.2V
Package type:
- 44-pin SOP
- 48-pin TSOP
Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
20 years data retention
GENERAL DESCRIPTION
The MX29F400CT/CB is a 4-mega bit Flash memory
organized as 512K bytes of 8 bits or 256K words of 16
bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access
memory. The MX29F400CT/CB is packaged in 44-pin
SOP, 48-pin TSOP. It is designed to be reprogrammed
and erased in system or in standard EPROM programmers.
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maximum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cycling. The MX29F400CT/CB uses a 5.0V±10% VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms.
The standard MX29F400CT/CB offers access time as
fast as 70ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29F400CT/CB has separate chip enable
(CE#) and output enable (OE#) controls.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F400CT/CB uses a command register to manage
this functionality. The command register allows for 100%
P/N:PM1200
REV. 0.02 , APR. 15, 2005
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