DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3355
SWITCHING
N-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
The 2SK3355 is N-channel MOS Field Effect Transistor
PART NUMBER
PACKAGE
2SK3355
TO-220AB
2SK3355-S
TO-262
2SK3355-ZJ
TO-263
2SK3355-Z
TO-220SMDNote
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 42 A)
Note TO-220SMD package is produced only
RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 42 A)
in Japan.
• Low Ciss: Ciss = 9800 pF TYP.
(TO-220AB)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±20
V
ID(DC)
±83
A
ID(pulse)
±332
A
Drain Current (DC) (TC = 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (TC = 25°C)
PT
100
W
Total Power Dissipation (TA = 25°C)
PT
1.5
Channel Temperature
Tch
150
(TO-262)
W
°C
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
75
A
Single Avalanche Energy
Note2
EAS
562
mJ
Storage Temperature
(TO-263, TO-220SMD)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14132EJ5V0DS00 (5th edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark ! shows major revised points.
©
1999, 2000
