RN1967FS~RN1969FS
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1967FS,RN1968FS,RN1969FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
1.0±0.05
1.0±0.05
Incorporating a bias resistor into a transistor reduces parts count.
0.1±0.05
2
5
4
0.1±0.05
6
+0.02
-0.04
Complementary to RN2967FS~RN2969FS
1
3
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
•
0.35 0.35
package.
•
0.8±0.05
0.1±0.05
0.48
Equivalent Circuit and Bias Resistor Values
C
E
R2 (kΩ)
10
47
RN1968FS
R2
B
R1 (kΩ)
RN1967FS
R1
Type No.
22
47
RN1969FS
47
22
fS6
0.15±0.05
Two devices are incorporated into a fine pitch Small Mold (6 pin)
0.7±0.05
•
Unit: mm
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
1.EMIITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
JEDEC
―
JEITA
―
TOSHIBA
2-1F1C
Weight: 0.001 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Equivalent Circuit
(top view)
Characteristics
Collector-base voltage
Collector-emitter voltage
Symbol
RN1967FS~
1969FS
Rating
Unit
VCBO
20
V
VCEO
20
V
RN1967FS
Emitter-base voltage
RN1968FS
Collector power dissipation RN1967FS~
RN1969FS
Junction temperature
Storage temperature range
Note:
5
4
Q2
Q1
6
VEBO
RN1969FS
Collector current
6
7
V
15
IC
1
50
50
150
°C
Tstg
−55~150
3
mW
Tj
2
mA
°C
PC (Note 1)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01
