IRLML6401PbF
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HEXFET® Power MOSFET
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
1.8V Gate Rated
Lead-Free
RoHS Compliant, Halogen-Free
G 1
VDSS = -12V
3 D
S
RDS(on) = 0.05Ω
2
Description
These P-Channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET® power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power MOSFET with the
industry's smallest footprint. This package, dubbed the Micro3™, is ideal for
applications where printed circuit board space is at a premium. The low profile
(<1.1mm) of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available .
Micro3™
Standard Pack
Base Part Number
Package Type
IRLML6401TRPbF
Micro3™ (SOT-23)
Form
Quantity
Tape and Reel
Orderable Part Number
3000
IRLML6401TRPbF
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Max.
Units
-12
-4.3
-3.4
-34
1.3
0.8
0.01
33
± 8.0
-55 to + 150
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
RθJA
1
Maximum Junction-to-Ambient
www.irf.com © 2014 International Rectifier
Typ.
Max.
Units
75
100
°C/W
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April 28, 2014
