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IXLF19N250A

製品説明
仕様・特性

2 5 0 0 V / 4 0 0 0 V V E RY H I G H V O LTA G E ( V H V ) I G B T S - N E W P R O D U C T B R I E F N E W P R O D U C T B R I E F SUMMARY TABLE 2500V/4000V Very High Voltage (VHV) IGBTs SIMPLIFY DESIGN, REDUCE COST AND IMPROVE RELIABILITY FOR HIGH VOLTAGE APPLICATIONS Part Number VCES IC @ TC = 90ºC, (IC90) VCE(sat, max) @ 25ºC, IC90 Eoff(inductive, typ) ™ TJ = 125ºC, IC90 / VCE IXLF19N250A 2500V 19A 3.90V 30mJ / 1500V 0.50ºC/W ISOPLUS i4-PAC™ IXEL40N400 4000V 40A 4.00V 220mJ / 2800V 0.33ºC/W ISOPLUS i5-PAC™ RTH(J-DCB) RTH(DCB-Case) Description * IXYS Patented Packages, Patent No. 6,404,065 IXYS VHV IGBTs vastly simplify the circuitry needed for switching in high voltage designs. They can enable the use of a single device in systems whose circuits use multiple cascoded lower voltage switches. This device consolidation reduces the numbers of power devices, while also improving cost and efficiency by eliminating complex drive and voltage balancing components. In those applications using high voltage thyristors, designers sacrifice the ability to easily turn-off the switch without greatly increasing circuit complexity. VHV IGBTs have the ability to turn switch current on and off, enabling the designer to implement signal modulation schemes for improved efficiency and wave shaping, as well as enabling load disconnect for improved systems safety. IXYS proprietary ISOPLUS discrete packaging improves the simplicity, reliability and efficiency of high voltage systems. The previously offered IXLF19N250A comes in IXYS ISOPLUS i4-Pac™, while the IXEL40N400 is offered in IXYS newly designated ISOPLUS i5-PAC™. All of IXYS ISOPLUS packages are manufactured with an internal DCB isolated substrate, are UL registered and provide integral backside case isolation. These packages provide for improved creepage distance to simplify compliance with regulatory spacing requirements. Their ceramic substrate enhances device reliability by greatly improving thermal and power cycling. An isolated backside simplifies mounting and with superior isolated thermal impedance. Thermal performance can be further improved by combining IXYS ISOPLUS package use with clip mounting and next generation phase change interface materials. More information on the IXYS ISOPLUS™ technology can be found on the IXYS website or the IXYS 2004/5 Selector Guide, page 23. Applications ISOPLUS i4-Pac™ • • • • • • • • • • • Very High Voltage Ratings – 2500V, 4000V High Current Ratings – 19A, 40A ISOPLUS i4-Pac™ and i5-Pac™ – Superior Isolated Packaging MOS Gate Turn-on • • Pulser Circuits, Capacitor Discharge High Voltage Power Supplies High Voltage EMR, Disharge Relay Replacement High Voltage Test Equipment Laser and X-Ray Generators 0.22 K/W IXFR55N50 (ISOPLUS247™ with Internal DCB Isolation) RTH(J-S) 1.02 K/W 1.24 K/W RTH(J-DCB) RTH(DCB-Case) 0.22 K/W 0.15 K/W 0.15 K/W 0.52 K/W – Denotes Inclusion of Isolation Boundary. • • Improves temperature cycling and power cycling capability. Cost effective clip mounting. ISOPLUS i5-Pac™ ISOPLUS i5-Pac™ C G E IGBT IXLF19N250A IXEL40N400 Benefits • • • RTH(C-S) Package Outline Drawings A broad range of high voltage applications stand to benefit from the simplicity offered by these convenient, discrete VHV IGBTs. Automated Test Equipment generating or measuring high voltage, pulse circuits and capacitor discharge applications, high voltage power supplies, laser and x-ray generation systems can all be designed more simply, with reduced cost and complexity. Traditional high voltage EMRs and discharge relays also can be replaced, reducing system complexity and improving overall reliability. Features Provides 2500V, UL recognized isolation with superior thermal performance (E153432). RTH(J-C) IXFX55N50 + SIL-PAD 2000™ February 2006 ISOPLUS i4-Pac™ Package ISOPLUS™ Packages with Internal Alumina DCB Isolation* Example Part + Isolation Medium IXYS offers a unique series of discrete 2500V and 4000V VHV IGBTs providing a myriad of benefits to system designers in high voltage applications. The very high voltage and current ratings of these parts, coupled with simplified MOS Gate-Control greatly reduce the complexity of high voltage switching. These parts are offered in IXYS ISOPLUS™ packaging to enable simpler mounting with improved reliability. RTH,JC Replace Multiple Cascoded MOSFETs or IGBTs Replace High Voltage Thyristors, Enabling True Switching Simplify Package Isolation With 2500VRMS Isolation Improved Lead to Lead Creepage Distance UL Registered Packages Superior Isolated Thermal Impedance in Discrete Packaging Improved Reliability, Power Cycling PIN 1 = Gate PIN 2 = Emitter PIN 3 = N/C PIN 4 = Collector TAB 5 = Electrically isolated 2,500V~ SYM A A1 A2 b b1 b2 C D E e e1 INCHES MIN MAX .205 .190 .102 .118 .046 .085 .045 .055 .058 .068 .100 .110 .020 .029 .819 .840 .770 .799 .150 BSC .450 BSC LEAD FINISH: Pb FREE SOLDER DIP MILLIMETERS MIN MAX 4.83 5.21 2.59 3.00 1.17 2.16 1.14 1.40 1.47 1.73 2.54 2.79 0.51 0.74 20.80 21.34 19.56 20.29 3.81 BSC 11.43 BSC SYM L L1 L2 Q R S T U PIN 1 = Gate PIN 2 = Emitter PIN 3 = N/C PIN 4 = Collector TAB 5 = Electrically isolated 2,500V~ INCHES MIN .780 .083 0 .210 .100 .660 .590 .065 MAX .840 .102 .050 .244 .180 .690 .620 .080 MILLIMETERS MIN MAX 19.81 21.34 2.11 2.59 1.27 0 5.33 6.20 2.54 4.57 16.76 17.53 14.99 15.75 1.65 2.03 A A1 MIN .190 .102 INCHES MAX .205 .118 A2 b b1 .046 .045 .063 .055 .055 .072 1.17 1.14 1.60 1.40 1.40 1.83 b2 b3 .100 .058 .110 .068 2.54 1.47 2.79 1.73 c D E .020 1.020 .770 .029 1.040 .799 0.51 25.91 19.56 0.74 26.42 20.29 SYM LEAD FINISH: Pb FREE SOLDER DIP MILLIMETERS MIN MAX 4.83 5.21 2.59 3.00 e L L1 Q Q1 R INCHES MAX .150 BSC .780 .820 .080 .102 .210 .235 .490 .513 .150 .180 MILLIMETERS MIN MAX 3.81 BSC 19.81 20.83 2.03 2.59 5.33 5.97 12.45 13.03 3.81 4.57 R1 S .100 .668 .130 .690 2.54 16.97 3.30 17.53 T U V .801 .065 .398 .821 .080 .406 20.34 1.65 10.11 20.85 2.03 10.31 SYM MIN

ブランド

IXYS

会社名

IXYS Corporation

本社国名

U.S.A

事業概要

IXYS社は1983年にアメリカシリコンバレーに設立されたパワー半導体メーカーであり、革新的な技術でIGBTを世に送り出しました、 1989年にはパワー半導体製造では1921年来の歴史を持つABB(アセア・ブラウンボベリ)のドイツ・ランパートハイム・パワー半導体本部を傘下に迎え、最先端技術によるスイッチングパワー素子の開発、製造に加え、ドイツABB社により長年築き上げられたバイポーラ製品、およびモジュール技術と融合し、最先端技術を有する世界規模のパワー半導体メーカーとして、優れた製品をご提供しております。 近年RFパワー半導体のDirect Energy Inc. (DEI)、英国の大容量パワー半導体メーカーWestcode社、加えてフォトMosリレー、SSRの米国老舗Clare社、ミックスドシグナルIC、電子ペーパー用ドライバASIC等のMicronix社、GaAsFETのMicrowave Technology社(MWT)を傘下に招き、大容量パワー半導体からIC製品までの幅広い優れた製品をご提供しております。

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