2SD1525
TOSHIBA Transistor
Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD1525
High Current Switching Applications
•
Unit: mm
High collector current: IC = 30 A
•
High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A)
•
Monolithic construction with built-in base-emitter shunt resistor.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
30
A
Base current
IB
5
A
PC
150
W
Tj
150
°C
Tstg
−55 to 150
°C
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 9.75 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 2 kΩ
≈ 100 Ω
EMITTER
1
2009-08-06
