TK6A55DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK6A55DA
Switching Regulator Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 1.26 Ω (typ.)
High forward transfer admittance: |Yfs| = 3.2 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 550 V)
Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
15.0 ± 0.3
A
3.9 3.0
•
•
•
•
2.7 ± 0.2
10 ± 0.3
Ф3.2 ± 0.2
Unit
Drain-source voltage
VDSS
550
V
Gate-source voltage
VGSS
±30
V
ID
5.5
DC
Drain current
(Note 1)
Pulse (t = 1 ms)
(Note 1)
2.54
22
Drain power dissipation (Tc = 25°C)
PD
35
W
Single pulse avalanche energy
(Note 2)
EAS
182
mJ
Avalanche current
IAR
5.5
A
Repetitive avalanche energy (Note 3)
EAR
3.5
mJ
Channel temperature
Tch
150
Tstg
−55 to 150
2
3
°C
Storage temperature range
1
1: Gate
2: Drain
3: Source
A
IDP
2.54
4.5 ± 0.2
Rating
2.6 ± 0.1
Symbol
0.64 ± 0.15
Characteristics
0.69 ± 0.15
Ф0.2 M A
13 ± 0.5
Absolute Maximum Ratings (Ta = 25°C)
2.8 MAX.
1.14 ± 0.15
°C
⎯
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
3.57
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.4 mH, RG = 25 Ω, IAR = 5.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
3
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-08-06
