Micron Confidential and Proprietary
2GB, 4GB, 8GB, 16GB, 32GB, 64GB: e·MMC
Features
e·MMC™ Memory
MTFC2GMTEA-WT, MTFC4GMTEA-WT, MTFC8GLTEA-WT,
MTFC16GLTAM-WT, MTFC16GLTDV-WT, MTFC16GJTEC-WT,
MTFC32GLTDM-WT, MTFC32GLTDI-WT, MTFC32GJTED-WT,
MTFC64GJTEF-WT
Features
Figure 1: Micron e·MMC Device
• MultiMediaCard (MMC) controller and NAND Flash
• 153- or 169-ball WFBGA/VFBGA/TFBGA (RoHS 6/6compliant)
• VCC: 2.7–3.6V
• VCCQ (dual voltage): 1.65–1.95V; 2.7–3.6V
• Temperature ranges
– Operating temperature: –25˚C to +85˚C
– Storage temperature: –40˚C to +85˚C
• Typical current consumption
– Standby current: 110–180μA (dependent on part
number)
– Active current (RMS): 70mA (2GB), 80mA (4GB,
8GB, 16GB, 32GB, 64GB)
MMC
power
NAND Flash
power
MMC controller
MMC
interface
NAND Flash
MMC-Specific Features
• JEDEC/MMC standard version 4.41-compliant
(JEDEC Standard No. 84-A441) – SPI mode not
supported (see www.jedec.org/sites/default/files/
docs/JESD84-A441.pdf)
– Advanced 11-signal interface
– x1, x4, and x8 I/Os, selectable by host
– MMC mode operation
– Command classes: class 0 (basic); class 2 (block
read); class 4 (block write); class 5 (erase);
class 6 (write protection); class 7 (lock card)
– Temporary write protection
– 52 MHz clock speed (MAX)
– Boot operation (high-speed boot)
– Sleep mode
– Replay-protected memory block (RPMB)
– Secure erase and trim
– Hardware reset signal
– Multiple partitions with enhanced attribute
– Permanent and power-on write protection
– Double data rate (DDR) function
– High-priority interrupt (HPI)
PDF: 09005aef8495885a
emmc_rev_r_v4_41_n2m400_enh_family.pdf - Rev. B 3/12 EN
MMC-Specific Features (Continued)
– Background operation
– Reliable write
– Backward-compatible with previous MMC
modes
• ECC and block management implemented
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
