FAST RECOVERY DIODE
DFG1C
FEATURES
OUTLINE DRAWING
• For high speed switching.
• Diffused-junction. Glass passivated and
encapsulated.
ABSOLUTE MAXIMUM RATINGS
Items
DFG1C1 DFG1C2 DFG1C4 DFG1C6 DFG1C8
Type
Repetitive Peak Reverse Voltage
V RRM
V
Average Forward Current
I F(AV)
A
Surge(Non-Repetitive) Forward Current
I FSM
A
2
100
2
200
400
600
1.0(TL=80°C)
800
1.0(TL=70°C)
(Single-phase half sine wave 180° conduction, Lead length = 10mm)
35
30
( Without PIV, 10ms conduction, Tj = 150°C start )
4.9
2
3.6
I t Limit Value
It
As
Operating Junction Temperature
Tj
°C
-65 ~ +150
T stg
°C
-65 ~ +150
Storage Temperature
Notes
( Time = 2 ~ 10ms, I = RMS value )
(1) Lead mounting : Lead temperature 300°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 2kg, Twist 90°×1 cycle.
CHARACTERISTICS(T L =25°C)
Items
Symbols
Units
Min.
Typ.
Max.
Peak Reverse Current
I RRM
µA
-
-
10
Rated V RRM
Peak Forward Voltage
V FM
V
-
-
1.2
-
-
1.6
DFG1C1,2,4 I FM =1.0Ap, Single-phase
half sine wave 1 cycle
DFG1C6,8
trr
µs
-
-
0.1
I F =0.5A, I rp =1.0A, 25% Recovery
°C/W
-
-
Reverse Recovery Time
Steady State Thermal Impedance
R th(j-a)
R th(j-l)
80
50
Test Conditions
Lead length = 10 mm
PDE-DFG1C-2 P 1 / 4
