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2SK3221-AZ

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仕様・特性

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3221 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3211 Isolated TO-220 low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) • Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A) • Avalanche capability ratings • Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±2.0 A ID(pulse) ±8.0 A Total Power Dissipation (TA = 25°C) PT1 2.0 W Total Power Dissipation (TC = 25°C) PT2 25 W Channel Temperature Tch 150 °C Drain Current (pulse) Note1 Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 2.0 A Single Avalanche Energy Note2 EAS 2.7 mJ dv/dt 3.5 V/ns Diode Recovery dv/dt Note3 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 ¡ 0 V 3. IF ≤ 1.0 A, Vclamp = 600 V, di/dt ≤ 100 A/ µs, TA = 25°C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13789EJ1V0DS00 (1st edition) Date Published June 2002 NS CP(K) Printed in Japan © 1998

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