SSM6N40TU
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM6N40TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
Unit: mm
2.1±0.1
4 V drive
N-ch 2-in-1
Low ON-resistance:
1.3±0.1
2.0±0.1
1
6
2
5
3
Ron = 182mΩ (max) (@VGS = 4 V)
Ron = 122mΩ (max) (@VGS = 10 V)
4
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
± 20
V
DC
ID
1.6
Pulse
IDP
3.2
PD (Note1)
500
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
0.7±0.05
Characteristic
0.166±0.05
Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common)
+0.1
0.3-0.05
•
•
•
0.65 0.65
1.7±0.1
Drain current
Drain power dissipation
1.Source1
UF6
JEDEC
4.Source2
2.Gate1
A
5.Gate2
3.Drain2
6.Drain1
―
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2T1B
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 7.0mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: Mounted on an FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm2 )
1
2007-11-05
