SEMICONDUCTOR
KRX206E
TECHNICAL DATA
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B
B1
FEATURES
・Including two devices in TES6.
C
A
2
5
4
A1
6
3
・With Built-in bias resistors.
1
C
(Thin Extreme Super mini type with 6 Pin.)
D
・Simplify circuit design.
・Reduce a quantity of parts and manufacturing process.
E
P
EQUIVALENT CIRCUIT
P
DIM
A
A1
B
B1
C
D
E
H
J
MILLIMETERS
_
1.6 + 0.05
_
1.0 + 0.05
_
1.6 + 0.05
_
1.2 + 0.05
0.50
_
0.2 + 0.05
_
0.35 + 0.05
_
0.5 + 0.05
_
0.12 + 0.05
P
Q2
R1
OUT
J
OUT
H
Q1
R1
IN
5
1.
2.
3.
4.
5.
6.
Q1 , Q 2
IN
R1=10KΩ
R2=47KΩ
R2
R2
COMMON
Q1
Q1
Q2
Q2
Q2
Q1
COMMON (EMITTER)
IN (BASE)
OUT (COLLECTOR)
COMMON (EMITTER)
IN (BASE)
OUT (COLLECTOR)
COMMON
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
Marking
4
6
5
4
Lot No.
Q1
Type Name
Q2
BK
1
1
2
2
3
3
Q1 MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
VO
50
V
Input Voltage
VI
30, -6
V
Output Current
IO
100
㎃
Q2 MAXIMUM RATING (Ta=25℃)
SYMBOL
RATING
UNIT
Output Voltage
CHARACTERISTIC
VO
-50
V
Input Voltage
VI
-30, 6
V
Output Current
IO
-100
㎃
SYMBOL
RATING
UNIT
PD *
200
㎽
Tj
150
℃
Tstg
-55~150
℃
Q1, Q2 MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
2014. 3. 31
Revision No : 3
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