DE150-201N09A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
Ideal for Class C, D, & E Applications
VDSS
Test Conditions
VDSS
TJ = 25°C to 150°C
200
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
200
Continuous
±20
Transient
±30
Tc = 25°C
9
Tc = 25°C, pulse width limited by TJM
54
A
IAR
Tc = 25°C
9.0
A
EAR
Tc = 25°C
7.5
mJ
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
5
V/ns
dv/dt
>200
V/ns
75
W
50
W
3.5
W
RthJC
2
C/W
RthJHS
3
C/W
75 W
A
IDM
=
V
ID25
0.3 Ω
V
VGSM
≤
V
VGS
9A
PDC
V
=
RDS(on)
Maximum Ratings
200 V
ID25
Symbol
=
IS = 0
DRAIN
PDC
PDHS
Tc = 25°C
Derate 4.4W/°C above 25°C
PDAMB
Tc = 25°C
Symbol
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min.
VDSS
VGS = 0 V, ID = 3 ma
VGS(th)
VDS = VGS, ID = 250 a
IGSS
VDS = 40 V, ID = 0.5ID25, pulse test
V
3.0
TL
Weight
3.5
cycling capability
IXYS advanced low Qg process
4.5
V
nA
µA
µA
Ω
S
Advantages
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
+175
°C
• Optimized for RF and high speed
°C
+175
175
1.6mm (0.063 in) from case for 10 s
SD2
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
•
•
−
−
•
•
•
4.5
-55
SD1
Features
0.3
TJM
Tstg
SG2
25
250
2
-55
TJ
SG1
±100
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
gfs
200
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
RDS(on)
max.
VGS = ±20 VDC, VDS = 0
IDSS
typ.
GATE
• Easy to mount—no insulators needed
• High power density
°C
300
°C
2
g
switching at frequencies to >100MHz
