U/SST440,441
MONOLITHIC DUAL
N-CHANNEL JFET
FEATURES
Direct Replacement for SILICONIX U/SST440 & U/SST441
HIGH CMRR
CMRR ≥ 85dB
LOW GATE LEAKAGE
ABSOLUTE MAXIMUM RATINGS
IGSS ≤ 1pA
1
U SERIES
TO-71
TOP VIEW
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to +150 °C
Operating Junction Temperature
S1
-55 to +150 °C
D1
Maximum Power Dissipation @ TA = 25°C
Continuous Power Dissipation (Total)
1
SOIC
S1
5
3
4
1
8
NC
D1
2
7
G2
G1
3
6
D2
D2 NC
4
5
S2
G2
6
2
G1
500mW
SST SERIES
S2
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain
-25V
Gate to Source
-25V
Gate to Gate
±50V
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
VGS1 − VGS2
Differential Gate to
Source Cutoff Voltage
Δ VGS1 − VGS2
ΔT
IDSS1
IDSS2
gfs1
gfs2
CMRR
MIN
TYP
MAX
U/SST440
10
U/SST441
20
Differential Gate to Source Cutoff
Voltage Change with Temperature
Gate to Source Saturation Current Ratio
Forward Transconductance Ratio
CONDITIONS
mV
VDG = 10V, ID = 5mA
µV/°C
20
3
UNITS
VDG = 10V, ID = 5mA
TA = -55 to +125°C
0.98
0.97
2
Common Mode Rejection Ratio
VDS = 10V, VGS = 0V
VDS = 10V, ID = 5mA, f = 1kHz
85
dB
VDG = 5 to 10V, ID = 5mA
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN
BVGSS
Gate to Source Breakdown Voltage
-25
VGS(off)
Gate to Source Cutoff Voltage
MAX
V
IG = -1µA, VDS = 0V
-1
-3.5
-6
V
VDS = 10V, ID = 1nA
6
2
TYP
mA
VDS = 10V, VGS = 0V
IDSS
Gate to Source Saturation Current
15
30
IGSS
Gate Leakage Current
-1
-500
IG
Gate Operating Current
-1
-500
Linear Integrated Systems
•
UNITS
pA
CONDITIONS
VGS = -15V, VDS = 0V
VDG = 10V, ID = 5mA
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
2/13/12 Rev#A2 ECN# U SST 440_441