Ordering number : ENN6910
MCH3309
P-Channel Silicon MOSFET
MCH3309
Ultrahigh-Speed Switching Applications
Preliminary
Features
•
•
Package Dimensions
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
unit : mm
2167
[MCH3309]
0.25
•
0.3
0.15
2
0.65
0.25
1
2.1
1.6
3
2.0
0.85
1 : Gate
2 : Source
3 : Drain
0.15
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
SANYO : MCPH3
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
-20
V
Gate-to-Source Voltage
VGSS
±10
V
ID
--1.5
A
Drain Current (DC)
Drain Current (Pulse)
IDP
PD
Allowable Power Dissipation
PW≤10µs, duty cycle≤1%
--6.0
A
0.9
Mounted on a ceramic board (900mm2!0.8mm)
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Ratings
min
typ
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
ID=--1mA, VGS=0
VDS=-20V, VGS=0
VGS=±8V, VDS=0
VDS=-10V, ID=--1mA
VDS=-10V, ID=--0.8A
-0.4
RDS(on)1
RDS(on)2
ID=--0.8A, VGS=-4V
ID=--0.4A, VGS=-2.5V
Unit
max
--20
VGS(off)
yfs
Zero-Gate Voltage Drain Current
V(BR)DSS
Conditions
IDSS
IGSS
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
V
--1
µA
±10
V
180
235
mΩ
240
1.6
µA
--1.3
340
mΩ
2.3
S
290
pF
Coss
VDS=-10V, f=1MHz
VDS=-10V, f=1MHz
40
pF
Crss
VDS=-10V, f=1MHz
25
pF
Marking : JJ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11801 TS IM TA-3058 No.6910-1/4
