CMZB12~CMZB53
TOSHIBA Zener Diode
Silicon Diffused Type
CMZB12~CMZB53
○ Communication, Control and
Measurement Equipment
○ Constant Voltage Regulation
○ Transient Suppressors
0.65 ± 0.2
Unit: mm
Average power dissipation: P = 1.0 W
•
Zener voltage: VZ = 12 to 53 V
•
Suitable for high-density board assembly due to the use of a small
surface-mount package, M−FLATTM
①
1.75 ± 0.1
Absolute Maximum Ratings (Ta = 25°C)
Symbol
+ 0.2
2.4 − 0.1
Rating
P
Junction temperature
Tj
−40 to 150
°C
Tstg
−40 to 150
°C
Note 1: Ta = 40°C
Device mounted on a glass-epoxy board
Board size: 50 mm × 50 mm
Soldering size: 6 mm × 6 mm
Board thickness: 1.6 mm
W
0 ~ 0.1
Power dissipation
Storage temperature range
1.0 (Note 1)
Unit
0.98 ± 0.1
Characteristics
0.16
0.65 ± 0.2
•
4.7 ± 0.2
3.8 ± 0.1
②
① ANODE
② CATHODE
JEDEC
―
JEITA
―
TOSHIBA
3-4E1A
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating temperature / current /
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2008-10-30