2SJ105
TOSHIBA Field Effect Transistor
Silicon P Channel Junction Type
2SJ105
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
•
High breakdown voltage: VGDS = 50 V
•
High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
•
Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA)
•
Complimentary to 2SK330
•
Unit: mm
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VGDS
50
V
Gate current
IG
−10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Tstg
−55~125
°C
Gate-drain voltage
Storage temperature range
Note:
JEDEC
―
Using continuously under heavy loads (e.g. the application of
JEITA
―
high temperature/current/voltage and the significant change in
TOSHIBA
2-4E1B
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.13 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = 30 V, VDS = 0
⎯
⎯
1.0
nA
V (BR) GDS
VDS = 0, IG = 100 μA
50
⎯
⎯
V
VDS = −10 V, VGS = 0
−1.2
⎯
−14
mA
VDS = −10 V, ID = −0.1 μA
0.3
⎯
6.0
V
VDS = −10 V, VGS = 0, f = 1 kHz
1.0
4.0
⎯
mS
⎯
270
⎯
Ω
IDSS
(Note)
Gate-source cut-off voltage
VGS (OFF)
Forward transfer admittance
⎪Yfs⎪
Drain-source ON resistance
RDS (ON)
VDS = −10 mV, VGS = 0
IDSS = −5 mA
Input capacitance
Ciss
VDS = −10 V, VGS = 0, f = 1 MHz
⎯
18
⎯
pF
Reverse transfer capacitance
Crss
VDG = −10 V, ID = 0, f = 1 MHz
⎯
3.6
⎯
pF
Note: IDSS classification Y: −1.2~−3.0 mA, GR: −2.6~−6.5 mA, BL: −6~−14 mA
1
2007-11-01